New Power Supply Components

Why Wolfspeed? 

Wolfspeed didn't become the leader in wide bandgap semiconductors overnight.

Our parent company, Cree, Inc., spent 28 years establishing a global brand known for innovation, financial strength and reliable materials sourcing, staffed by the most forward-looking thinkers and doers in any scientific enterprise.

Wolfspeed was born ready, and we're outpacing the  
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Microsemi SiC MOSFETs lineup 

Check Microsemi line of SiC MOSFETs at the link below

Microsemi SiC MosFETs Advantages
-Best in Class RDS(on) vs Temperature: leads to lower switching losses as well as stability over the complete operating temperature range.
-Longest Short Circuit Withstand Rating: highest simple easy control circuit design

Silicone Carbide (SiC) Schottky MOSFETs offer 
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New 1200 V, 215 mΩ (typ) SiC power MOSFET from STMicroelectronics 

ST has extended its SiC MOSFET portfolio with the introduction of the 215 mΩ (typ), 1200 V SCT20N120. Just as the 80 mΩ version (SCT30N120), the device is packaged in the proprietary HiP247™ package and features the industry's highest junction temperature rating of 200 °C. It shows a very small variation of the on-state resistance versus Tj and also t 
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Rohm Starts Mass Production of First Trench-type SiC MOSFET 

" ... Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in the chip surface). Unlike planar-type MOSFETs, junction gate (JFET) resistance does not exist, enabling greater miniaturization  
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The Industry's First AC/DC Converter Control IC for SiC Drive 

ROHM has recently announced the development of an AC/DC converter control IC designed specifically for SiC MOSFET drive in industrial equipment such as servers and other large power applications.

The BD7682FJ-LB allows easy implementation of SiC-MOSFETs in AC/DC converters. AC/DC converter design has proved challenging when using discrete configurations due to the l 
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Common Mode Choke for filtering electromagnetic interference (EMI) and radio frequency interference  

Common Mode Choke for filtering electromagnetic interference (EMI) and radio frequency interference(RFI)

The impedance of an inductor is proportional to its inductance and the frequency of the signal passing through it. Inductors, therefore, can act like low-pass filters, that is they allow low frequency signals to pass through them, while they blo 
GaN Systems is introducing a range of Gallium Nitride high power transistors 

GaN Systems is introducing a range of Gallium Nitride high power transistors for cleantech power conversion applications. Featuring exceptionally low on-resistance and negligible charge storage, these devices will enable switching efficiencies well in excess of current silicon based solutions and offer dramatic benefits to switching power supply designs, inverters, hybrid  
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